DCMT 11T308E-HE3-EC511D, ANSI: DCMT 3252, 55° Rhombic Positive Turning Insert, RE 0.8mm (0.03"), Carbide (CVD) for semi-finish turning of M Materials in general (medium Interrupted) conditions
| Turning Load | Semi-finish |
|---|---|
| Workpiece Material | [M] Stainless Steel |
| Cutting Conditions | General-Medium Interrupted |
| Insert Style | D Style - 55° Rhombic |
| Insert Material | Carbide (CVD) |
| Grade | EC511D |
| Corner Radius, inch | 0.03 |
| Side Clearance | Positive |
| Chip Breaker | HE3 |
| ANSI code | DCMT 3252 |
| ISO code | DCMT 11T308 |
| Corner Radius, mm | 0.8 |
| Brand | EASYCUT |
| Total discount | 30% |
| Item type | Turning Inserts |
Grade: EC511D
M25 (M15-M30) First choice for stainless steel turning. Features a CVD coating combined with a new carbide substrate, offering stable machining performance and exceptional notch wear resistance.
P35 (P25-P45) A supplemental option for steel turning applications requiring high toughness.
Chip Breaker: HE3
First choice for semi-finish turning. The cutting edge design ensures smooth cutting, effectively prevents built-up edge formation, and supports a wide range of chip evacuation.
| Turning Load | Semi-finish |
|---|---|
| Workpiece Material | [M] Stainless Steel |
| Cutting Conditions | General-Medium Interrupted |
| Insert Style | D Style - 55° Rhombic |
| Insert Material | Carbide (CVD) |
| Grade | EC511D |
| Corner Radius, inch | 0.03 |
| Side Clearance | Positive |
| Chip Breaker | HE3 |
| ANSI code | DCMT 3252 |
| ISO code | DCMT 11T308 |
| Corner Radius, mm | 0.8 |
| Brand | EASYCUT |
| Total discount | 30% |
| Item type | Turning Inserts |
Grade: EC511D
M25 (M15-M30) First choice for stainless steel turning. Features a CVD coating combined with a new carbide substrate, offering stable machining performance and exceptional notch wear resistance.
P35 (P25-P45) A supplemental option for steel turning applications requiring high toughness.
Chip Breaker: HE3
First choice for semi-finish turning. The cutting edge design ensures smooth cutting, effectively prevents built-up edge formation, and supports a wide range of chip evacuation.